These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These device.
-4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________ 54 63 72 81 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA = 25°C - Continuous TA = 70°C - Pulsed TA = 25°C Maximum Power Dissipation (Note 1a) (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ,TSTG Operating and Stora.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDS9400A |
Fairchild |
Single P-Channel MOSFET | |
2 | NDS9407 |
Fairchild |
Single P-Channel MOSFET | |
3 | NDS9410A |
Fairchild |
Single N-channel MOSFET | |
4 | NDS9410S |
Fairchild |
Single N-channel MOSFET | |
5 | NDS9430 |
Fairchild |
30V P-Channel PowerTrench MOSFET | |
6 | NDS9430A |
Fairchild |
Single P-Channel MOSFET | |
7 | NDS9435A |
Fairchild |
30V P-Channel MOSFET | |
8 | NDS96P |
INSIGNIS |
1M x 16 bit Synchronous DRAM | |
9 | NDS9925A |
Fairchild |
Dual N-Channel MOSFET | |
10 | NDS9933A |
Fairchild |
Dual P-Channel MOSFET | |
11 | NDS9936 |
Fairchild |
Dual N-Channel MOSFET | |
12 | NDS9945 |
Fairchild |
Dual N-Channel MOSFET |