NDS9410S - Fairchild

NDS9410S Single N-channel MOSFET

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook com.

Features

7.0 A, 30 V. RDS(ON) = 0.03 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 ABSOLUTE MAXIMUM RATINGS T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) NDS9410S 30 ±20 7 25 2.5 1.2 1 -55 to 150 Units V V A W TJ,TSTG Opera.