This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powere.
• 7.3 A, 30 V. RDS(ON) = 28 mΩ @ VGS = 10 V RDS(ON) = 42 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability in a widely used surface mount package.
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
7.3 20 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Oper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDS9410S |
Fairchild |
Single N-channel MOSFET | |
2 | NDS9400A |
Fairchild |
Single P-Channel MOSFET | |
3 | NDS9405 |
ETC |
single P-Channel MOSFET | |
4 | NDS9407 |
Fairchild |
Single P-Channel MOSFET | |
5 | NDS9430 |
Fairchild |
30V P-Channel PowerTrench MOSFET | |
6 | NDS9430A |
Fairchild |
Single P-Channel MOSFET | |
7 | NDS9435A |
Fairchild |
30V P-Channel MOSFET | |
8 | NDS96P |
INSIGNIS |
1M x 16 bit Synchronous DRAM | |
9 | NDS9925A |
Fairchild |
Dual N-Channel MOSFET | |
10 | NDS9933A |
Fairchild |
Dual P-Channel MOSFET | |
11 | NDS9936 |
Fairchild |
Dual N-Channel MOSFET | |
12 | NDS9945 |
Fairchild |
Dual N-Channel MOSFET |