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NDS9410S |
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| Part Number | NDS9410S |
| Manufacturer | Fairchild |
| Description | SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
7.0 A, 30 V. RDS(ON) = 0.03 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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5 6 7 8
4 3 2 1
ABSOLUTE MAXIMUM RATINGS T A = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
NDS9410S 30 ±20 7 25 2.5 1.2 1 -55 to 150
Units V V A W
TJ,TSTG
Opera... |
| Document |
 NDS9410S Data Sheet
PDF 329.49KB |
| Distributor | Stock | Price | Buy |
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