Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
FEATURES ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recovery Parameters ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ND.
·Reduced RFI and EMI
·Reduced Snubbing
·Extensive Characterization of Recovery Parameters
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·These devices are ideally suited for power converters,
motors drives and other applications where switching losses are significant portion of the total losses.
ND260N12K
Diode Rectifier Module
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VRRM Repetitive Peak Reverse Voltage
IF(AV)
Average Forward Current
TC=100℃
IFSM
Surge Forward Current
I2t
I2t for fusing
tp =10ms,Tj =25℃ tp =10ms,Tj =.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ND260N |
eupec |
Rectifier Diode |
|
| 2 | ND261N |
eupec |
Rectifier Diode |
|
| 3 | ND2012E |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 4 | ND2012L |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 5 | ND2012L |
TEMIC |
N-Channel Depletion-Mode MOSFET Transistors |
|
| 6 | ND2020E |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 7 | ND2020L |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 8 | ND2020L |
TEMIC |
N-Channel Depletion-Mode MOSFET Transistors |
|
| 9 | ND2406B |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 10 | ND2406L |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 11 | ND2406L |
ETC |
(ND2406L / ND2410L) N-Channel Depletion-Mode MOSFET Transistors |
|
| 12 | ND2410B |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|