ND2406B - Siliconix

ND2406B N-Channel Depletion-Mode MOS Transistors

ND2406 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (0) (A) PACKAGE ND2406L 240 6 0.23 TO-92 ND2406B 240 6 0.57 TO-205AF ~Siliconix ~ incorporated TO-92 BOTTOM VIEW ~~ ~ ~ 1 SOURCE 2 GATE 3 DRAIN TO-205AF BOTTOM VIEW Performance Curves: VDDV24 (See Section 7) 1 SOURCE 2 GATE 3 DRA.

Features

erence case for all temperature testing 6-44 ND2406L 156 ND2406B 125 UNITS DC/W .rSiliconix .LJII incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(BR)OSV VGS(OFF) IGSS Drain Cutoff Current Drain Saturation Current 3 Drain-Source On-Resistance 3 10(OFF) loss rOS(ON) ~~~~;~~nductance 3 gFS Common Source Output Conductance 3 gos DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time C lss Coss C rss td(ON) tr Turn-Off Time t d(OFF) tf TEST CON.