ND2012L - Siliconix

ND2012L N-Channel Depletion-Mode MOS Transistors

ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.16 TO-92 ND2012E 200 12 0.22 TO-206AC tcrSiliconix ~ incorporatE!d TO-92 BOTTOM VIEW ~r::::::4 ~ ~ 1 SOURCE . 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW Performance Curves: VDDQ20 (See Section 7) .

Features

m junction temperature 2Reference case for all temperature testing 6-40 ND2012L 156 ND2012E 400 UNITS °C/W ..LrI-ISiinlciocrpoonratiexd ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(BR)OSV VGS(OFF) IGSS Drain Cutoff Current Drain Saturation Current 3 Drain-Source On-Resistance 3 10(OFF) loss rOS(ON) Forward Transconductance Common Source Output Conductance 3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time gFs gos CISS Coss erss td(ON) tr Turn-Off Tim.