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N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module ND260N ND260N ElektKriesnchnedaEtigeennschaften / Electrical properties Elektrische Eigenschaften Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung Tvj = -40°C... Tvj max repeTtitihve eperakmreviesrsecvholtaegesEigenschaften Stoßspitzensperrspannung non-re.
se current Isolations-Prüfspannung insulation test voltage Tvj = Tvj max , iF = 800 A Tvj = Tvj max Tvj = Tvj max Tvj = Tvj max , vR = VRRM RMS, f = 50 Hz, t = 1 sec RMS, f = 50 Hz, t = 1 min vF V(TO) rT iR VISOL max. 1,32 V 0,7 V 0,68 mΩ max. 30 mA 3,6 kV 3,0 kV Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case pro Modul / per Module, Θ = 180° sin RthJC pro Modul / per Module, DC max. 0,170 °C/W max. 0,164 °C/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junct.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ND260N12K |
INCHANGE |
Diode Rectifier |
|
| 2 | ND261N |
eupec |
Rectifier Diode |
|
| 3 | ND2012E |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 4 | ND2012L |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 5 | ND2012L |
TEMIC |
N-Channel Depletion-Mode MOSFET Transistors |
|
| 6 | ND2020E |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 7 | ND2020L |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 8 | ND2020L |
TEMIC |
N-Channel Depletion-Mode MOSFET Transistors |
|
| 9 | ND2406B |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 10 | ND2406L |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 11 | ND2406L |
ETC |
(ND2406L / ND2410L) N-Channel Depletion-Mode MOSFET Transistors |
|
| 12 | ND2410B |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|