ND2020L - Siliconix

ND2020L N-Channel Depletion-Mode MOS Transistors

ND2020 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE ND2020L 200 20 0.132 TO-92 ND2020E 200 20 0.18 TO-206AC a'Y"Siliconix ~ incorporated TO-92 BOTTOM VIEW ~§ 1 SOURCE 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW Performance Curves: VDDQ20 (See Section 7) 1 SOURCE 2 GATE.

Features

perature 2Reference case for all temperature testing 6-42 ND2020L 156 ND2020E 400 UNITS DC/W ~ ttCriSnciolripcooranteri:x:l ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V{BR)OSV VGS{OFF) IGSS Drain Cutoff Current Drain Saturation Current 3 Drain-Source On-Reslstance3 10{OFF) loss rOS{ON) ~~~:~~nductance 3 Common Source Output Conductance 3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time gFS gos C lss Coss C rss td{ON) tr Turn-Off Time t d{OFF) tf TES.