ND2410B - Siliconix

ND2410B N-Channel Depletion-Mode MOS Transistors

ND2410 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV reStON) 10 NUMBER (V) (0) (A) PACKAGE ND2410L 240 10 0.18 TO-92 ND2410B 240 10 0.46 TO-205AF .rY"Siliconix ~ incorporated TO-92 BOTTOM VIEW ~(§) 1 SOURCE 2 GATE 3 DRAIN TO-205AF BOTTOM VIEW Performance Curves: VDDV24 (See Section 7) 1 SOURCE 2 GATE 3 DRAIN &.

Features

nce case for all temperature testing 6-46 ND2410L 156 ND2410B 125 UNITS DC/W ~Siliconix ..LII inccrpcrated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(BR)OSV VGS(OFF) IGSS Drain Cutoff Current Drain Saturation Current3 Drain-Source On-Reslstance 3 10(OFF) IDSS rOS(ON) ~~~~:b~nductance 3 Common Source Output Conductance 3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time gFS 90S C lss Coss C rss td(ON) tr Turn-Off Time td(OFF) tf TEST CONDITIONS ND2.