NCE6003Y - NCE Power Semiconductor

NCE6003Y N-Channel Enhancement Mode Power MOSFET

The NCE6003Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● High power and current handing capabilit.

Features

● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package D G S Schematic Diagram Marking and Pin Assignment Application
●Battery switch
●DC/DC converter SOT-23 -3L Top View Package Marking and Ordering Information Device Marking Device Device Package 6003 NCE6003Y SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Co.