The NCE6005R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible .
● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V
(Typ:38mΩ)
D G
S
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
SOT-223-3L view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6005R
NCE6005R
SOT-223-3L
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE6005AR |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE6005AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE6005S |
NCE Power |
N-Channel Enhancement Mode Power MOSFET | |
4 | NCE6005S |
VBsemi |
Dual N-Channel MOSFET | |
5 | NCE6003 |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
6 | NCE6003M |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
7 | NCE6003Y |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
8 | NCE6007S |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
9 | NCE6012AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | NCE6020AI |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
11 | NCE6020AK |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
12 | NCE6020AL |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |