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The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V ● High Power and current handing capabili.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NCE6003 |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE6003Y |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE6005AR |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE6005AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE6005R |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 6 | NCE6005S |
NCE Power |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | NCE6005S |
VBsemi |
Dual N-Channel MOSFET |
|
| 8 | NCE6007S |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 9 | NCE6012AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 10 | NCE6020AI |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 11 | NCE6020AK |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 12 | NCE6020AL |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|