NCE6005AR - NCE Power Semiconductor

NCE6005AR N-Channel Enhancement Mode Power MOSFET

The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curren.

Features

● VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply SOT-223-3L view Package Marking and Ordering Information Device Marking NCE6005AR Device NCE6005AR Device Package SOT-223-3L R.