NCE6012AS - NCE Power Semiconductor

NCE6012AS N-Channel Enhancement Mode Power MOSFET

The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage a.

Features

● VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses Schematic diagram Application
● Power switching application
● Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE6012AS NCE6012AS SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parame.