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NCE6003Y |
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| Part Number | NCE6003Y |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE6003Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or i... |
| Features |
● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic Diagram Marking and Pin Assignment Application ●Battery switch ●DC/DC converter SOT-23 -3L Top View Package Marking and Ordering Information Device Marking Device Device Package 6003 NCE6003Y SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Co... |
| Document |
 NCE6003Y Data Sheet
PDF 272.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE6003 |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE6003M |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE6005AR |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE6005AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE6005R |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET |
|