MTP6P20E - Motorola

MTP6P20E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6P20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6P20E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also of.

Features

1.0 OHM ® D G S CASE 221A
  –06, Style 5 TO
  –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain
  –to
  –Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperatur.