MTP6P20E |
Part Number | MTP6P20E |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6P20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6P20E Motorola Preferred Device P–Channel Enhancement... |
Features |
1.0 OHM
®
D
G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperatur... |
Document |
MTP6P20E Data Sheet
PDF 216.09KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTP6P20E |
ON Semiconductor |
Power MOSFET | |
2 | MTP60N05HDL |
Motorola |
TMOS POWER FET | |
3 | MTP60N06HD |
Motorola |
TMOS POWER FET | |
4 | MTP6N10 |
Motorola |
POWER FIELD EFFECT TRANSISTOR | |
5 | MTP6N60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |