CYStech Electronics Corp. Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2018.10.24 Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET MTP1013C3 BVDSS ID@ TA=25C, VGS=-4.5V RDSON@VGS=-4.5V, ID=-500mA RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-10mA -20V -500mA 0.63Ω(typ) 1.1Ω(typ) 1.7Ω(typ) Features • Very low level gate drive req.
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V.
• Compact industrial standard SOT-523 surface mount package.
• ESD protected gate
• Pb-free lead plating and halogen-free package.
Equivalent Circuit
MTP1013C3
Outline
SOT-523 D
G:Gate S:Source D:Drain
S G
Ordering Information
Device
MTP1013C3-0-T1-G
Package
SOT-523 (Pb-free lead plating package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Prod.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTP10-B7F55 |
MemsFrontier |
Thermopile Sensor | |
2 | MTP10N05 |
Motorola |
(MTP10N05 / MTP10N06) N-Channel Power MOSFETs | |
3 | MTP10N06 |
Motorola |
(MTP10N05 / MTP10N06) N-Channel Power MOSFETs | |
4 | MTP10N08 |
Fairchild Semiconductor |
(MTP10N08 / MTP10N10) N-Channel Power MOSFETs | |
5 | MTP10N08 |
Motorola Semiconductor |
(MTP10N08 / MTP10N10) Power Field Effect Transistor | |
6 | MTP10N10 |
Fairchild Semiconductor |
(MTP10N08 / MTP10N10) N-Channel Power MOSFETs | |
7 | MTP10N10 |
Motorola Semiconductor |
(MTP10N08 / MTP10N10) Power Field Effect Transistor | |
8 | MTP10N10E |
Motorola |
TMOS POWER FETs | |
9 | MTP10N10E |
ON Semiconductor |
Power MOSFET | |
10 | MTP10N10EL |
Motorola |
TMOS POWER FET | |
11 | MTP10N10EL |
ON Semiconductor |
Power MOSFET | |
12 | MTP10N10M |
Motorola Semiconductor |
Power Field Effect Transistor |