MTP6N60E - ON Semiconductor

MTP6N60E Power Field Effect Transistor

MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy effic.

Features

ature http://onsemi.com TMOS POWER FET 6.0 AMPERES, 600 VOLTS RDS(on) = 1.2 W TO−220AB CASE 221A−09 Style 5 D G S © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 7 1 Publication Order Number: MTP6N60E/D MTP6N60E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 600 V.