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MTP6P20E |
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| Part Number | MTP6P20E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTP6P20E Preferred Device Power MOSFET 6 Amps, 200 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design als... |
| Features |
(tp ≤ 10 ms)
VGS VGSM
± 20 ± 40
Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 μs)
ID ID IDM
6.0 3.9 21
Total Power Dissipation Derate above 25°C
PD 75 0.6
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance − Junction to Case − Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
EAS
RθJC RθJA
TL
180
1.67 62.5 260
Unit Vdc Vdc
Vdc Vpk Adc Apk Watts W/°C... |
| Document |
 MTP6P20E Data Sheet
PDF 199.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP6P20E |
Motorola |
TMOS POWER FET |
|
| 2 | MTP60N05HDL |
Motorola |
TMOS POWER FET |
|
| 3 | MTP60N06HD |
Motorola |
TMOS POWER FET |
|
| 4 | MTP6N10 |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 5 | MTP6N60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|