MTP23P06V - ON Semiconductor

MTP23P06V Power MOSFET 23 Amps

MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diod.

Features

ergy
  – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 23 Apk, L = 3.0 mH, RG = 25 Ω) Thermal Resistance
  – Junction to Case Thermal Resistance
  – Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 60 60 ± 15 ± 25 23 15 81 90 0.60
  –55 to 175 794 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ TO
  –220AB CASE 221A STYLE 5 1 4 G S http://onsemi.com 23 AMPERES 60 VOLTS RDS(on) = 120 mΩ P
  –Channel D MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain MTP23P06V LLYWW 3 Source 2 Drain RθJC RθJA TL .