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BVDSS ID RDSON@VGS=10V, ID=-3A RDSON@VGS=-4.5V, ID=-2A -60V -11A 63mΩ(typ) 78mΩ(typ) The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Simple drive requirement • Low on-resistance • Fast switching speed • .
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTP2311V8
Outline
DFN3×3 Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device MTP2311V8-0-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel
MTP2311V8
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTP2311AV8 |
CYStech Electronics |
P-Channel Enhancement Mode MOSFET |
|
| 2 | MTP2311N3 |
CYStech Electronics |
-60V P-CHANNEL Enhancement Mode MOSFET |
|
| 3 | MTP2317N3 |
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20V P-CHANNEL Enhancement Mode MOSFET |
|
| 4 | MTP2301N3 |
CYStech Electronics |
20V P-CHANNEL Enhancement Mode MOSFET |
|
| 5 | MTP2301S3 |
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20V P-Channel Enhancement Mode MOSFET |
|
| 6 | MTP2301V3 |
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-20V P-CHANNEL Enhancement Mode MOSFET |
|
| 7 | MTP23N05L |
Motorola |
Power Field Effect Transistor |
|
| 8 | MTP23P06 |
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Power Field Effect Transistor |
|
| 9 | MTP23P06V |
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TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
|
| 10 | MTP23P06V |
ON Semiconductor |
Power MOSFET 23 Amps |
|
| 11 | MTP2010J3 |
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P-Channel Logic Level Enhancement Mode MOSFET |
|
| 12 | MTP2071M3 |
CYStech Electronics |
20V P-CHANNEL Enhancement Mode MOSFET |
|