MTP2071M3 - CYStech Electronics

MTP2071M3 20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 1/8 MTP2071M3 Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A -20V -5A 52mΩ (typ.) 66mΩ (typ..

Features

• Single Drive Requirement
• Ultra High Speed Switching
• Pb-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A -20V -5A 52mΩ (typ.) 66mΩ (typ.) 80mΩ (typ.) Symbol MTP2071M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note :
*1. Pulse widt.