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MTP23P06V |
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| Part Number | MTP23P06V |
| Manufacturer | Motorola |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product a... |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous Gate –to –Source Voltage — Non –repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Dra... |
| Document |
 MTP23P06V Data Sheet
PDF 192.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP23P06 |
Motorola |
Power Field Effect Transistor |
|
| 2 | MTP23P06V |
ON Semiconductor |
Power MOSFET 23 Amps |
|
| 3 | MTP2301N3 |
CYStech Electronics |
20V P-CHANNEL Enhancement Mode MOSFET |
|
| 4 | MTP2301S3 |
CYStech |
20V P-Channel Enhancement Mode MOSFET |
|
| 5 | MTP2301V3 |
CYStech Electronics |
-20V P-CHANNEL Enhancement Mode MOSFET |
|