MTP2301N3 - CYStech Electronics

MTP2301N3 20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET MTP2301N3 BVDSS ID@TA=25°C, VGS=-4.5V RDSON(TYP)@VGS=-4.5V, ID=-2.8A RDSON(TYP)@VGS=-2.5V, ID=-2A -20V -3.4A 79mΩ 116mΩ Features • Advanced trench process technology • High density cell design for ultra l.

Features

• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package Equivalent Circuit MTP2301N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTP2301N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape &.