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CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 MTP2317N3 Features • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free.
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A
-20V -5.8A 28mΩ(typ.) 35mΩ(typ.) 51mΩ(typ.)
Equivalent Circuit
MTP2317N3
Outline
SOT-23 D
G G：Gate S：Source D：Drain
S
Ordering Information
Device MTP2317N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel
Environment friendly.
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| 1 | MTP2311AV8 |
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| 2 | MTP2311N3 |
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| 3 | MTP2311V8 |
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| 4 | MTP2301N3 |
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