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MTP2317N3 |
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| Part Number | MTP2317N3 |
| Manufacturer | CYStech Electronics |
| Description | CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 MTP2317N3 Features • Advanced trench process tech... |
| Features |
• Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A -20V -5.8A 28mΩ(typ.) 35mΩ(typ.) 51mΩ(typ.) Equivalent Circuit MTP2317N3 Outline SOT-23 D G G：Gate S：Source D：Drain S Ordering Information Device MTP2317N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly... |
| Document |
 MTP2317N3 Data Sheet
PDF 362.17KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP2311AV8 |
CYStech Electronics |
P-Channel Enhancement Mode MOSFET |
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| 2 | MTP2311N3 |
CYStech Electronics |
-60V P-CHANNEL Enhancement Mode MOSFET |
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| 3 | MTP2311V8 |
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P-Channel Enhancement Mode MOSFET |
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| 4 | MTP2301N3 |
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20V P-CHANNEL Enhancement Mode MOSFET |
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| 5 | MTP2301S3 |
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20V P-Channel Enhancement Mode MOSFET |
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