MTB030P06KH8 - CYStech Electronics

MTB030P06KH8 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET MTB030P06KH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characterist.

Features

RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 35.6 mΩ(typ) 42.6 mΩ(typ) Symbol MTB030P06KH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB030P06KH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound produ.