MTB030N10RE3 - CYStech Electronics

MTB030N10RE3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB030N10RE3 Spec. No. : C053E3 Issued Date : 2016.08.26 Revised Date : Page No. : 1/ 8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RD.

Features

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) 30.8 mΩ(typ) Symbol MTB030N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB030N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing sp.