MT48H8M16LF - Micron Technology

MT48H8M16LF Synchronous DRAM

. .5 Functional Description . . . . . . . .8 Initializ.

Features

Synchronous DRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features
• Temperature compensated self refresh (TCSR)
• Fully synchronous; all signals registered on positive edge of system clock
• Internal pipelined operation; column address can be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge, and auto refresh modes
• Self refresh mode; standard and low power
• 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Low voltage power supply
• Partial array .