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MT48H8M16LF |
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| Part Number | MT48H8M16LF |
| Manufacturer | Micron Technology |
| Description | . . . . . . . . . . .5 Functional Description . . . . . ... |
| Features |
Synchronous DRAM
MT48H8M16LF - 2 Meg x 16 x 4 banks
Features
• Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto precharge, includes concurrent auto precharge, and auto refresh modes • Self refresh mode; standard and low power • 64ms, 4,096-cycle refresh • LVTTL-compatible inputs and outputs • Low voltage power supply • Partial array ... |
| Document |
 MT48H8M16LF Data Sheet
PDF 2.08MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT48H8M32LF |
Micron Technology |
Mobile Low-Power SDR SDRAM |
|
| 2 | MT48H8M32LF |
Micron Technology |
MOBILE SDRAM |
|
| 3 | MT48H8M32LFB5-10 |
Micron Technology |
MOBILE SDRAM |
|
| 4 | MT48H8M32LFB5-8 |
Micron Technology |
MOBILE SDRAM |
|
| 5 | MT48H8M32LFF5-10 |
Micron Technology |
MOBILE SDRAM |
|