.. 7 Functional Block Diagram ........ 8 Ball Assignments and Descriptions .
Mobile LPSDR SDRAM
MT48H32M16LF
– 8 Meg x 16 x 4 Banks MT48H16M32LF/LG
– 4 Meg x 32 x 4 Banks Features
• VDD/VDDQ = 1.7
–1.95V
• Fully synchronous; all signals registered on positive edge of system clock
• Internal, pipelined operation; column address can be changed every clock cycle
• Four internal banks for concurrent operation
• Programmable burst lengths: 1, 2, 4, 8, and continuous
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control self refresh rate
• Partial-array self ref.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT48H16M32LF |
Micron Technology |
Mobile LPSDR SDRAM | |
2 | MT48H16M16LF |
Micron Technology |
(MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM | |
3 | MT48H16M16LFBG |
Micron Technology |
256M x 16 Mobile SDRAM | |
4 | MT48H16M16LFFG |
Micron Technology |
256M x 16 Mobile SDRAM | |
5 | MT48H32M16LF |
Micron Technology |
Mobile LPSDR SDRAM | |
6 | MT48H32M32LF |
Micron Technology |
Mobile LPSDR SDRAM | |
7 | MT48H32M32LG |
Micron Technology |
Mobile LPSDR SDRAM | |
8 | MT48H4M16LF |
Micron Technology |
Mobile SDRAM | |
9 | MT48H4M32LF |
Micron Technology |
Mobile Low-Power SDR SDRAM | |
10 | MT48H8M16LF |
Micron Technology |
Synchronous DRAM | |
11 | MT48H8M32LF |
Micron Technology |
Mobile Low-Power SDR SDRAM | |
12 | MT48H8M32LF |
Micron Technology |
MOBILE SDRAM |