MT48H8M32LFF5-10 - Micron Technology

MT48H8M32LFF5-10 MOBILE SDRAM

. .5 Ball Assignment . . . . . .7 Ba.

Features

Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features
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• Low voltage power supply Partial array self refresh power-saving mode Temperature Compensated Self Refresh (TCSR) Deep power-down mode Programmable output drive strength Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable burst leng.