. .5 Ball Assignment . . . . . .7 Ba.
Mobile SDRAM
MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile
Features
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• Low voltage power supply Partial array self refresh power-saving mode Temperature Compensated Self Refresh (TCSR) Deep power-down mode Programmable output drive strength Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable burst leng.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT48H8M32LFF5-10 |
Micron Technology |
MOBILE SDRAM | |
2 | MT48H8M32LF |
Micron Technology |
Mobile Low-Power SDR SDRAM | |
3 | MT48H8M32LF |
Micron Technology |
MOBILE SDRAM | |
4 | MT48H8M32LFB5-10 |
Micron Technology |
MOBILE SDRAM | |
5 | MT48H8M32LFB5-8 |
Micron Technology |
MOBILE SDRAM | |
6 | MT48H8M16LF |
Micron Technology |
Synchronous DRAM | |
7 | MT48H16M16LF |
Micron Technology |
(MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM | |
8 | MT48H16M16LFBG |
Micron Technology |
256M x 16 Mobile SDRAM | |
9 | MT48H16M16LFFG |
Micron Technology |
256M x 16 Mobile SDRAM | |
10 | MT48H16M32LF |
Micron Technology |
Mobile LPSDR SDRAM | |
11 | MT48H16M32LG |
Micron Technology |
(MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM | |
12 | MT48H16M32LG |
Micron Technology |
Mobile LPSDR SDRAM |