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This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Power management Features • Q1: N-Channel 7 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 40 .
• Q1: N-Channel
7 A, 30 V
RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 40 mΩ @ VGS = 4.5V
• Q2: P-Channel
–7 A,
–30 V
RDS(on) = 25 mΩ @ VGS =
–10V RDS(on) = 36 mΩ @ VGS =
–4.5V
DD1DD2DD2 DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Q2
5
6
Q1
7
8
4 3 2 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID PD
TJ, TSTG
Drain-Source Voltage Gate-Source Voltage
Drain Current - Continuous - Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
The.
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|---|---|---|---|---|
| 1 | MT4600 |
Matrix Microtech |
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|
| 2 | MT4600 |
MT Semiconductor |
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|
| 3 | MT4601B02-1 |
CSOT |
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| 4 | MT4601B02-2 |
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|
| 5 | MT4606 |
MT Semiconductor |
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| 6 | MT46H128M16LF |
Micron Technology |
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|
| 7 | MT46H128M32L2 |
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Mobile Low-Power DDR SDRAM |
|
| 8 | MT46H16M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 9 | MT46H16M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 10 | MT46H16M32LG |
Micron Technology |
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|
| 11 | MT46H256M32L4 |
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|
| 12 | MT46H256M32R4 |
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|