MT46H256M32L4 - Micron Technology

MT46H256M32L4 Mobile Low-Power DDR SDRAM

of signal connections and die configurations for each respective architecture. Figure 1: 2Gb Mobile LPDDR Part Numbering MT 46 Micron Technology Product Family 46 = Mobile LPDDR H 64M32 LF CK -6 IT :A Design Revision :A = First generation Operating Temperature Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C) AT = Automotive (–40°C to .

Features

Mobile Low-Power DDR SDRAM MT46H128M16LF
  – 32 Meg x 16 x 4 Banks MT46H64M32LF
  – 16 Meg x 32 x 4 Banks MT46H128M32L2
  – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4
  – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4
  – 32 Meg x 16 x 4 Banks x 4 Features
• VDD/VDDQ = 1.70
  –1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• 4 internal banks for concurrent .