of signal connections and die configurations for each respective architecture. Figure 1: 2Gb Mobile LPDDR Part Numbering MT 46 Micron Technology Product Family 46 = Mobile LPDDR H 64M32 LF CK -6 IT :A Design Revision :A = First generation Operating Temperature Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C) AT = Automotive (–40°C to .
Mobile Low-Power DDR SDRAM
MT46H128M16LF
– 32 Meg x 16 x 4 Banks MT46H64M32LF
– 16 Meg x 32 x 4 Banks MT46H128M32L2
– 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4
– 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4
– 32 Meg x 16 x 4 Banks x 4 Features
• VDD/VDDQ = 1.70
–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• 4 internal banks for concurrent .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT46H128M32L2 |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
2 | MT46H16M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
3 | MT46H16M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
4 | MT46H16M32LG |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
5 | MT46H256M32L4 |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
6 | MT46H256M32R4 |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
7 | MT46H32M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
8 | MT46H32M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
9 | MT46H32M32LG |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
10 | MT46H4M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
11 | MT46H64M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM | |
12 | MT46H64M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |