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MT4607 |
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| Part Number | MT4607 |
| Manufacturer | MT Semiconductor |
| Description | This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for su... |
| Features |
• Q1: N-Channel 7 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 40 mΩ @ VGS = 4.5V • Q2: P-Channel –7 A, –30 V RDS(on) = 25 mΩ @ VGS = –10V RDS(on) = 36 mΩ @ VGS = –4.5V DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Q2 5 6 Q1 7 8 4 3 2 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range The... |
| Document |
 MT4607 Data Sheet
PDF 306.27KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT4600 |
Matrix Microtech |
P & N-Channel 100-V(D-S) MOSFET |
|
| 2 | MT4600 |
MT Semiconductor |
Dual N & P-Channel PowerTrench MOSFET |
|
| 3 | MT4601B02-1 |
CSOT |
LCD Module |
|
| 4 | MT4601B02-2 |
CSOT |
LCD Module |
|
| 5 | MT4606 |
MT Semiconductor |
N+P-Channel Enhancement Mode Field Effect Transistor |
|