Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
of products still under development. PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16.fm - Rev. A 03/05 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. DataSheet 4 U .com www.DataSheet4U.com Preview 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR.
• VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data
–one mask per byte
• Programmable burst lengths: 2, 4, 8, 16 or full page
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LV.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT46H16M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 2 | MT46H16M32LG |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 3 | MT46H128M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 4 | MT46H128M32L2 |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 5 | MT46H256M32L4 |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 6 | MT46H256M32R4 |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 7 | MT46H32M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 8 | MT46H32M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 9 | MT46H32M32LG |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 10 | MT46H4M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 11 | MT46H64M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 12 | MT46H64M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|