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These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line .
• N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V RDS (ON) = 38mΩ (max.) @ VGS =2.5V
• P-Channel -30V/-4.6A, RDS (ON) = 63mΩ (max.) @ VGS =-4.5V RDS (ON) = 85mΩ (max.) @ VGS = -2.5V
General Description
These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching ar.
MT4600 - Matrix Microtech
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and cons.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT4601B02-1 |
CSOT |
LCD Module |
|
| 2 | MT4601B02-2 |
CSOT |
LCD Module |
|
| 3 | MT4606 |
MT Semiconductor |
N+P-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | MT4607 |
MT Semiconductor |
Dual N & P-Channel PowerTrench MOSFET |
|
| 5 | MT46H128M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 6 | MT46H128M32L2 |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 7 | MT46H16M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 8 | MT46H16M32LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 9 | MT46H16M32LG |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 10 | MT46H256M32L4 |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 11 | MT46H256M32R4 |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|
| 12 | MT46H32M16LF |
Micron Technology |
Mobile Low-Power DDR SDRAM |
|