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MT4600 |
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| Part Number | MT4600 |
| Manufacturer | MT Semiconductor |
| Description | These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-sta... |
| Features |
• N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V RDS (ON) = 38mΩ (max.) @ VGS =2.5V • P-Channel -30V/-4.6A, RDS (ON) = 63mΩ (max.) @ VGS =-4.5V RDS (ON) = 85mΩ (max.) @ VGS = -2.5V General Description These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching ar... |
| Document |
 MT4600 Data Sheet
PDF 496.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT4600 |
Matrix Microtech |
P & N-Channel 100-V(D-S) MOSFET |
|
| 2 | MT4601B02-1 |
CSOT |
LCD Module |
|
| 3 | MT4601B02-2 |
CSOT |
LCD Module |
|
| 4 | MT4606 |
MT Semiconductor |
N+P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | MT4607 |
MT Semiconductor |
Dual N & P-Channel PowerTrench MOSFET |
|