The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability. MS1455 A.
• 836 MHz
• 12.5 VOLTS
• POUT = 45 WATTS
• GP = 4.7 dB MINIMUM
• COMMON BASE CONFIGURATION
DESCRIPTION:
The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability.
MS1455
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
VCEO
Collector-Emit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MS1451 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
2 | MS1451 |
TE |
piezoresistive silicon pressure sensor | |
3 | MS1452 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
4 | MS1453 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
5 | MS1454 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
6 | MS14 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
7 | MS1401 |
Microsemi |
RF & MICROWAVE TRANSISTORS | |
8 | MS1401 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS | |
9 | MS1402 |
Microsemi |
RF & MICROWAVE TRANSISTORS | |
10 | MS1403 |
Microsemi |
RF & MICROWAVE TRANSISTORS | |
11 | MS1404 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS | |
12 | MS14046 |
Vishay |
Inductors |