KEY FEATURES W W W . Microsemi . COM The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 450 - 512 MHz.
W W W . Microsemi . COM The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 450 - 512 MHz !" 12.5 Volts !" Efficiency 55% !" POUT = 2.0 W Min. !" GP = 10.0 dB Gain !" APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS UHF Mobile !" Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG Parameter Collect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MS1401 |
Microsemi |
RF & MICROWAVE TRANSISTORS | |
2 | MS1401 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS | |
3 | MS1403 |
Microsemi |
RF & MICROWAVE TRANSISTORS | |
4 | MS1404 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS | |
5 | MS14046 |
Vishay |
Inductors | |
6 | MS14052 |
Gowanda Electronics |
RF Molded Chokes | |
7 | MS1406 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS | |
8 | MS1408 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS | |
9 | MS1409 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS | |
10 | MS14 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
11 | MS14103 |
ETC |
Bearing | |
12 | MS141A |
Micro Electronics |
0.4 SINGLE DIGIT NUMERIC DISPLAYS |