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The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCER VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emit.
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150 MHz 7.5 Volts Common Emitter POUT = 2.5 W Min. GP = 11.0 dB Gain
DESCRIPTION:
The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO VCER VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
36 16 36 4.0 1.7 15 +200 -65 to +150
V V V V A W °C °.
MS1401 - Microsemi
KEY FEATURES W W W . Microsemi . COM The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed p.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS1402 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1403 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 3 | MS1404 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS |
|
| 4 | MS14046 |
Vishay |
Inductors |
|
| 5 | MS14052 |
Gowanda Electronics |
RF Molded Chokes |
|
| 6 | MS1406 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS |
|
| 7 | MS1408 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS |
|
| 8 | MS1409 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS |
|
| 9 | MS14 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 10 | MS14103 |
ETC |
Bearing |
|
| 11 | MS141A |
Micro Electronics |
0.4 SINGLE DIGIT NUMERIC DISPLAYS |
|
| 12 | MS141C |
Micro Electronics |
0.4 SINGLE DIGIT NUMERIC DISPLAYS |
|