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The MS1404 is a 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCER VCES VEBO PDISS IC TJ T STG Parameter Collector - Base Voltage Collector – Emitter Vol.
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• 470 MHz 12.5 VOLTS POUT = 5.0 WATT GP = 8.5 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1404 is a 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCER VCES VEBO PDISS IC TJ T STG
Parameter
Collector - Base Voltage Collector
– Emitter Voltage Collector
– Emitter Voltage Emitter- Base Voltage Power Dissipation Device Current
* Junction Temperature Storage Temperature
Va.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS1401 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1401 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS |
|
| 3 | MS1402 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 4 | MS1403 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 5 | MS14046 |
Vishay |
Inductors |
|
| 6 | MS14052 |
Gowanda Electronics |
RF Molded Chokes |
|
| 7 | MS1406 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS |
|
| 8 | MS1408 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS |
|
| 9 | MS1409 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS |
|
| 10 | MS14 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 11 | MS14103 |
ETC |
Bearing |
|
| 12 | MS141A |
Micro Electronics |
0.4 SINGLE DIGIT NUMERIC DISPLAYS |
|