MS1451 RF & MICROWAVE TRANSISTORS Datasheet

MS1451 RF & MICROWAVE TRANSISTORS

The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output device or as the driver for MS1452. Diffused emitter ballast resistors provide thermal stability and reliability under Class AB linear operation. MS1451 ABSOLUTE.

Features

• 800-960 MHz
• 24 VOLTS
• CLASS AB LINEAR OPERATION
• POUT = 15 WATTS
• GP = 8.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1451 is a gold metallized silicon NPN planar transistor designed for high linearity Class AB operation in cellular base station applications. The MS1451 is designed as a medium power output device or as the driver for MS1452. Diffused emitter ballast resistors provide thermal stability and reliability under Class AB linear operation. MS1451 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VCES VEBO PDISS IC TJ Parameter Collector-Base Voltag.

The same part from a different manufacturer

MS1451 - TE

MS1451 SPECIFICATIONS  PC Board Mountable Pressure Sensor  0-60 mV Output  Gage and Absolute  Low Cost The MS1451 is.

Related Product

No.	Partie #	Fabricant	Description
1	MS1452	Advanced Power Technology	RF & MICROWAVE TRANSISTORS
2	MS1453	Advanced Power Technology	RF & MICROWAVE TRANSISTORS
3	MS1454	Advanced Power Technology	RF & MICROWAVE TRANSISTORS
4	MS1455	Advanced Power Technology	RF & MICROWAVE TRANSISTORS
5	MS14	Pan Jit International	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
6	MS1401	Microsemi	RF & MICROWAVE TRANSISTORS
7	MS1401	Advanced Power Technology	RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS
8	MS1402	Microsemi	RF & MICROWAVE TRANSISTORS
9	MS1403	Microsemi	RF & MICROWAVE TRANSISTORS
10	MS1404	Advanced Power Technology	RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
11	MS14046	Vishay	Inductors
12	MS14052	Gowanda Electronics	RF Molded Chokes

MS1451 - Advanced Power Technology