Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base st.
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRFE6S9060N Rev. 1, 10/2007
MRFE6S9060NR1
880 MHz, 14 W AVG., 28 V SINGLE N - CDMA
LATERAL N - CHANNEL BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRFE6S9045NR1 |
Freescale Semiconductor |
RF Power FET | |
2 | MRFE6S9125NBR1 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs | |
3 | MRFE6S9125NR1 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs | |
4 | MRFE6S9130HR3 |
Freescale Semiconductor |
RF Power FET | |
5 | MRFE6S9130HSR3 |
Freescale Semiconductor |
RF Power FET | |
6 | MRFE6S9135HR3 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs | |
7 | MRFE6S9135HSR3 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs | |
8 | MRFE6S9160HR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
9 | MRFE6S9160HSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
10 | MRFE6S9200HR3 |
Motorola Semiconductor Products |
RF Power FET | |
11 | MRFE6S9200HSR3 |
Motorola Semiconductor Products |
RF Power FET | |
12 | MRFE6S9201HR3 |
Motorola Semiconductor Products |
RF Power Field Effect Transistors |