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.
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9130H Rev. 1, 12/2008
MRFE6S9130HR3 MRFE6S9130HSR3
880 MHz, 27 W AVG., 28 V SINGLE N - CDMA
LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780
MRFE6S9130HR3
CASE 465A - 06, STYLE 1 NI - 780S
MRFE6S9130HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRFE6S9130HR3 |
Freescale Semiconductor |
RF Power FET |
|
| 2 | MRFE6S9135HR3 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
| 3 | MRFE6S9135HSR3 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
| 4 | MRFE6S9125NBR1 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
| 5 | MRFE6S9125NR1 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
| 6 | MRFE6S9160HR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 7 | MRFE6S9160HSR3 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 8 | MRFE6S9045NR1 |
Freescale Semiconductor |
RF Power FET |
|
| 9 | MRFE6S9060NR1 |
Freescale Semiconductor |
RF Power FET |
|
| 10 | MRFE6S9200HR3 |
Motorola Semiconductor Products |
RF Power FET |
|
| 11 | MRFE6S9200HSR3 |
Motorola Semiconductor Products |
RF Power FET |
|
| 12 | MRFE6S9201HR3 |
Motorola Semiconductor Products |
RF Power Field Effect Transistors |
|