MRFE6S9125NBR1 - Freescale Semiconductor

MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs

20 pF Chip Capacitor 6.2 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitors, Gigatrim 11 pF Chip Capacitors 0.56 μF, 50 V Chip Capacitors 47 μF, 16 V Tantalum Capacitors 47 pF Chip Capacitors 100 μF, 50 V Electrolytic Capacitor 12 pF Chip Capacitors 5.1 pF Chip Capacitors 0.3 pF Chip Capacitor 39 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitors 470 μF, 63 V.

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) MRFE6S9125NR1 MRFE6S9125NBR1 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 27.